SPN1014-N-Channel Enhancement Mode MOSFET

SPN1014-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN1014 is the N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES
N-Channel
20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
  Super high density cell design for extremely low RDS (ON)
  Exceptional on-resistance and maximum DC current capability
  SOT-523 (SC-89) package design

APPLICATIONS
􀁺 Drivers : Relays/Solenoids/Lamps/Hammers
􀁺 Power Supply Converter Circuits
􀁺 Load/Power Switching Cell Phones, Pagers

( SOT-523 / SC-89-3L )

Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note

Min Max 25°C 10V 4.5V 2.5V 1.8V 25°C

V V V V A mΩ mΩ mΩ mΩ W

SPP1013 P 20 12 0.35 0.8 0.45 　 520 700 950 0.27 SOT-523 　

SPP1015 P 20 12 0.35 1.0 0.45 　 520 700 950 0.27 SOT-523 　ESD

SPN1012 N 20 12 0.35 1 0.65 　 380 450 800 0.27 SOT-523 　

SPN1014 N 20 12 0.35 1 0.65 　 380 450 800 0.27 SOT-523 　ESD