SPN1012-ESD N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION 
   The SPN1012 is the N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES
􀂋 N-Channel
20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 SOT-523 (SC-89) package design

APPLICATIONS
􀁺 Drivers : Relays/Solenoids/Lamps/Hammers
􀁺 Power Supply Converter Circuits
􀁺 Load/Power Switching Cell Phones, Pagers

( SOT-523 / SC-89-3L )
Part No.	TYPE	VDSS	VGS	VTH		IDS	RDS(Max)				PD	Package	Note
				Min	Max	25°C	10V	4.5V	2.5V	1.8V	25°C
		V	V	V	V	A	mΩ	mΩ	mΩ	mΩ	W
SPP1013	P	20	12	0.35	0.8	0.45		520	700	950	0.27	SOT-523
SPP1015	P	20	12	0.35	1.0	0.45		520	700	950	0.27	SOT-523	ESD
SPN1012	N	20	12	0.35	1	0.65		380	450	800	0.27	SOT-523
SPN1014	N	20	12	0.35	1	0.65		380	450	800	0.27	SOT-523	ESD