SPC4527-N&P Pair Enhancement Mode MOSFET DataSheet
DESCRIPTION APPLICATIONS The SPC4527 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
FEATURES N-Channel 40V/10A,RDS(ON)= 24mΩ@VGS= 10V 40V/ 8A,RDS(ON)= 30mΩ@VGS= 4.5V 40V/ 6A,RDS(ON)= 36mΩ@VGS= 2.5V P-Channel -40V/-10A,RDS(ON)= 38mΩ@VGS=- 10V -40V/- 8A,RDS(ON)= 46mΩ@VGS=- 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
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