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 SPP2341-P-Channel Enhancement Mode MOSFET  DataSheet DESCRIPTIONThe SPP2341 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
 This high density process is especially tailored to minimize on-state resistance.
 These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
 FEATURES -20V/-3.3 A,RDS(ON)= 45mΩ@VGS=-4.5V
  -20V/-2.8 A,RDS(ON)= 55mΩ@VGS=-2.5V
  -20V/-2.3 A,RDS(ON)= 65mΩ@VGS=-1.8V
  Super high density cell design for extremely low RDS (ON)
  Exceptional on-resistance and maximum DC current capability
  SOT-23-3L package design
 APPLICATIONS Power Management in Note book
  Portable Equipment
  Battery Powered System
  DC/DC Converter
  Load Switch
  DSC
  LCD Display inverter
 
 
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