SPP2309-P-Channel Enhancement Mode MOSFET DataSheet
DESCRIPTION The SPP2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES P-Channel -20V/2.5A,RDS(ON)= 0.35Ω@VGS=-4.5V -20V/1.5A,RDS(ON)= 0.48Ω@VGS=-2.5V -20V/0.7A,RDS(ON)= 0.75Ω@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
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