SPN1306-ESD N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN1306 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance.
    These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.

FEATURES 
 N-Channel
30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V
30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V
30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 SOT-323 package design

APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter

( SOT-323 / SC-70-3L )
Part No.	TYPE	VDSS	VGS	VTH		IDS	RDS(Max)				PD	Package	Note
				Min	Max	25°C	10V	4.5V	2.5V	1.8V	25°C
		V	V	V	V	A	mΩ	mΩ	mΩ	mΩ	W
SPP1305	P	20	12	0.35	0.8	1		280	380	530	0.33	SOT-323
SPP1413	P	20	12	0.5	1.8	2.9	130	150			0.33	SOT-323
SPP7407	P	20	12	0.35	0.8	2.3		100	125	170	0.33	SOT-323
SPP1433	P	30	20	1	3	2.8	110	140			0.33	SOT-323
SPP7401	P	30	12	0.4	1	2.8	115	135	170	240	0.33	SOT-323
SPN1304	N	20	12	0.35	1	2		225	315	425	0.33	SOT-323
SPN1423	N	20	12	0.45	1.2	2.8		90	100		0.33	SOT-323
SPN7402	N	20	12	0.35	0.85	2.4		65	80	95	0.33	SOT-323
SPN1443	N	30	20	1	3	2.8	65	90			0.33	SOT-323
SPN7400	N	30	12	0.8	1.6	2.8	77	85	110		0.33	SOT-323
SPN7002U	N	60	20	1	2.5	0.64	2000	4000			0.33	SOT-323
SPN1306	N	30	12	0.35	1.0	0.65		550	650	850	0.33	SOT-323