SPN4868-N-Channel Enhancement Mode MOSFET DataSheet
DESCRIPTION The SPN4868 is the N-Channel logic enhancement modepower field effect transistors are produced using high celldensity , DMOS trench technology. This high density process is especially tailored tominimize on-state resistance. These devices are particularly suited for low voltageapplication, notebook computer power management andother battery powered circuits where high-sideswitching.
FEATURES 60V/6A,RDS(ON)=21mΩ@VGS=10V 60V/4A,RDS(ON)=24mΩ@VGS=4.5V Super high density cell design for extremely lowRDS (ON) Exceptional on-resistance and maximum DC currentcapability SOP-8Ppackage design
APPLICATIONS Motor Drive Power Tools LED Lighting
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