SPN80T10-N-Channel Enhancement Mode MOSFET DataSheet
DESCRIPTION The SPN80T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN80T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
FEATURES 100V/100A,RDS(ON)=8.2mΩ@VGS=10V HighdensitycelldesignforextremelylowRDS(ON) Exceptionalon-resistanceandmaximumDCcurrentcapability TO-220-3L/TO-220F-3L/TO-251S-3L/TO-252-2L/TO-263-2L/PPAK5x6-8Lpackagedesign
APPLICATIONS Powered System DC/DC Converter Load Switch
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