SPN4412W-N-Channel Enhancement Mode MOSFET

SPN4412W-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN4412W is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance.
    These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .

FEATURES
30V/6.0A,RDS(ON)= 25mΩ@VGS= 10V
30V/4.0A,RDS(ON)= 36mΩ@VGS= 4.5V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
SOP – 8P package design

APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter