SPP2095-P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPP2095 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage application, such as
DC/DC converter and Desktop computer power
management.
    The package is universally preferred for commercial
industrial surface mount applications.

FEATURES 
􀂋 -20V/-6.0A,RDS(ON)= 65mΩ@VGS=-4.5V
􀂋 -20V/-3.6A,RDS(ON)= 850mΩ@VGS=-2.5V
􀂋 -20V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 TO-252-2L package design

APPLICATIONS
􀁺 Power Management in Desktop Computer
􀁺 DC/DC Converter
􀁺 LCD Display inverter

( TO-251/TO-252-2L )
Part No.	TYPE	VDSS	VGS	VTH		IDS	RDS(Max)				PD	Package	Note
				Min	Max	25°C	10V	4.5V	2.5V	1.8V	25°C
		V	V	V	V	A	mΩ	mΩ	mΩ	mΩ	W
SPP2095	P	20	12	0.32	0.8	12		65	85	105	40	TO-252-2L
SPP3052	P	30	20	1	3	25	50	85			40	TO-252-2L
SPP3095	P	30	20	1	3	12	100	150			40	TO-252-2L
SPP5413	P	40	20	0.8	2.5	18	26	36			40	TO-252-2L
SPN2038	N	20	16	0.5	1.2	38		20	28		40	TO-252-2L
SPN2054	N	20	12	0.36	1	12	40			60	40	TO-252-2L
SPN3006	N	30	20	1	2.5	80	5.5	9			40	TO-252-2L
SPN3009	N	30	20	1	2.5	51	9	13.5			40	TO-252-2L
SPN3055	N	30	20	1	3	12	60	90			40	TO-252-2L
SPN8878	N	30	20	1	3	25	12	17			40	TO-252-2L
SPN8878B	N	30	20	0.6	1.8	20	14	19			40	TO-252-2L
SPN8882	N	30	20	0.8	2.4	60	10	14			40	TO-251TO252-2
SPN5454	N	40	20	0.5	1	20	18	20	28		40	TO-252-2L
SPN9910	N	60	20	1	2.5	60	12	15			40	TO-251TO252-2
SPN9971	N	60	20	0.8	2	25	40	45			40	TO-251TO252-2
SPN9977	N	60	20	0.5	1.5	16	110	115			40	TO-251TO252-2
SPN05T10	N	100	20	1	2.5	6	320	340			40	TO-252-2L
SPN09T10	N	100	20	1	3	14	160				40	TO-252-2L
SPN11T10	N	100	20	1	3	16	120	200			40	TO-252-2L
SPN30T10	N	100	20	1	3	22	45	50			40	TO-252-2L
SPN12T20	N	200	20	2	5	18	210				40	TO-252-2L