SPN7002T-Dual N-Channel Enhancement Mode MOSFET  DataSheet

DESCRIPTION APPLICATIONS
    The SPN7002D is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES 
􀂋 60V/0.50A , RDS(ON)= 2.0Ω@VGS=10V
􀂋 60V/0.20A , RDS(ON)= 4.0Ω@VGS=4.5V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 SOT-363 package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 Portable Equipment
􀁺 Battery Powered System
􀁺 DC/DC Converter
􀁺 Load Switch
􀁺 DSC
􀁺 LCD Display inverter

( SOT-363 / SC-70-6L )
Part No.	TYPE	VDSS	VGS	VTH		IDS	RDS(Max)				PD	Package	Note
				Min	Max	25°C	10V	4.5V	2.5V	1.8V	25°C
		V	V	V	V	A	Ω	Ω	Ω	Ω	W
SPP6308	P	20	12	0.35	0.8	1		0.52	0.7	0.95	0.35	SOT-363
	P	20	12	0.35	0.8	1		0.52	0.7	0.95
SPP6309	P	20	12	0.35	1.0	1		0.52	0.7	0.95	0.35	SOT-363	ESD
	P	20	12	0.35	1.0	1		0.52	0.7	0.95
SPC6332	P	20	12	0.35	0.8	1		0.52	0.7	0.95	0.35	SOT-363
	N	20	12	0.35	1	1.2		0.38	0.45	0.8
SPC6333	P	20	12	0.35	1.0	1		0.52	0.7	0.95	0.35	SOT-363	ESD
	N	20	12	0.35	1	1.2		0.38	0.45	0.8
SPN6335	N	20	12	0.35	1	1.2		0.38	0.45	0.8	0.35	SOT-363
	N	20	12	0.35	1	1.2		0.38	0.45	0.8
SPN6336	N	20	12	0.35	1	1.2		0.38	0.45	0.8	0.35	SOT-363	ESD
	N	20	12	0.35	1	1.2		0.38	0.45	0.8
SPN6435	N	40	20	1	1.3	0.3	4	5	10		0.35	SOT-363
	N	40	20	1	1.3	0.3	4	5	10
SPN7002D	N	60	20	1	2.5	0.5	5	5.5			0.35	SOT-363
	N	60	20	1	2.5	0.5	5	5.5
SPN7002T	N	60	20	1	2.5	0.64	2	4			0.35	SOT-363
	N	60	20	1	2.5	0.64	2	4
SPN6338	N	30	12	0.35	1	1		550	650	850	0.35	SOT-363	ESD
	N	30	12	0.35	1	1		550	650	850
SPP6307	P	30	12	0.35	1	1		650	950	1500	0.35	SOT-363