SPC6332-N&P Pair Enhancement Mode MOSFET DataSheet
DESCRIPTION APPLICATIONS The SPC6332 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
FEATURES N-Channel 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V P-Channel -20V/1.0A,RDS(ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS(ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS(ON)= 950mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-363 (SC-70-6L) package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
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