| 
 SPN4992-Dual N-Channel Enhancement Mode MOSFET  DataSheet DESCRIPTIONThe SPN4992is the Dual N-Channel logic enhancement
 mode power field effect transistors are produced using
 high cell density , DMOS trench technology.
 This high density process is especially tailored to
 minimize on-state resistance.
 These devices are particularly suited for low voltage
 application , notebook computer power management and
 other battery powered circuits where high-side
 switching .
 FEATURES100V/2A, RDS(ON)= 180mΩ@VGS= 10V
 High density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 SOP-8 package design
 APPLICATIONS Power Management in Note book
  Portable Equipment
  Battery Powered System
  DC/DC Converter
  Load Switch
  DSC
  LCD Display inverter
 
 
 |