SPN1024-Dual N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION APPLICATIONS
    The SPN1024 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES 
􀂋 N-Channel
20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 SOT-563 (SC-89-6L) package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 Portable Equipment
􀁺 Battery Powered System
􀁺 DC/DC Converter
􀁺 Load Switch
􀁺 DSC
􀁺 LCD Display inverter

( SOT-563 / SC-89-6L )
Part No.	TYPE	VDSS	VGS	VTH		IDS	RDS(Max)				PD	Package	Note
				Min	Max	25°C	10V	4.5V	2.5V	1.8V	25°C
		V	V	V	V	A	Ω	Ω	Ω	Ω	W
SPP1021	P	20	12	0.35	1.0	0.45		0.52	0.7	0.95	0.3	SOT-563	ESD
	P	20	12	0.35	1.0	0.45		0.52	0.7	0.95
SPP1023	P	20	12	0.35	0.8	0.45		0.52	0.7	0.95	0.3	SOT-563
	P	20	12	0.35	0.8	0.45		0.52	0.7	0.95
SPN1022	N	20	12	0.35	1	0.65		0.38	0.45	0.8	0.35	SOT-563	ESD
	N	20	12	0.35	1	0.65		0.38	0.45	0.8
SPN1024	N	20	12	0.35	1	0.65		0.38	0.45	0.8	0.35	SOT-563
	N	20	12	0.35	1	0.65		0.38	0.45	0.8
SPN1026	N	60	20	1	2.5	0.32	5	5.5			0.3	SOT-563
	N	60	20	1	2.5	0.32	5	5.5
SPC1016	P	20	12	0.35	0.8	0.45		0.52	0.7	0.95	0.3	SOT-563
	N	20	12	0.35	1	0.65		0.38	0.45	0.8
SPC1018	P	20	12	0.35	1.0	0.45		0.52	0.7	0.95	0.3	SOT-563