SPN8852-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN8852 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where  high-side switching .

FEATURES
150V/4.1A,RDS(ON)=88mΩ@VGS=10V
150V/2A,RDS(ON)=100mΩ@VGS=4.5V
SuperhighdensitycelldesignforextremelylowRDS(ON)
Exceptionalon-resistanceandmaximumDCcurrentcapability
PPAK5x6-8Lpackagedesign

APPLICATIONS
DC/DCConverter
LoadSwitch
SynchronousBuckConverter
SMPSSecondarySideSynchronousRectifier
PowerTool
MotorControl