SPN3422-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN3422 is the N-Channel logic enhancement modepower field effect transistors are produced using high celldensity , DMOS trench technology.
This high density process is especially tailored tominimize on-state resistance.
These devices are particularly suited for low voltageapplication such as cellular phone and notebookcomputer power management and other battery poweredcircuits, and low in-line power loss are needed in a verysmall outline surface mount package.

FEATURES
60V/3.0A,RDS(ON)=125mΩ@VGS=10V
60V/2.5A,RDS(ON)=145mΩ@VGS=4.5V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
SOT-23 package design

APPLICATIONS
PowerManagement in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter