SPN8810-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
TheSPN8810istheN-Channel logic enhancement modepower field effect
transistors are produced using high celldensity , DMOS trench technology.
This high density process is especially tailored tominimize on-state resistance.
These devices are particularly suited for low voltageapplication,notebook
computer power management andother battery powered circuits where high-sideswitching.

FEATURES
100V/85A,RDS(ON)=8.5mΩ@VGS=10V
100V/85A,RDS(ON)=10.5mΩ@VGS=4.5V
Super high density cell design for extremely lowRDS(ON)
Exceptional on-resistance and maximum DCcurrent capability
PPAK5x6-8Lpackage design

APPLICATIONS
DC/DC Converter
Load Switch
Synchronous Buck Converter
SMPS Secondary Side Synchronous Rectifier
Power Tool
Motor Control