SPN125T06-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN125T06 is the N-Channel logic enhancement
mode power field effect transistor which is produced
using super high cell density DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suitable for synchronous rectifier
application, Motor control power management and other
Power Tool circuits. It has been optimized for low gate
charge, low RDS(ON) and fast switching speed.

FEATURES
  60V/125A,RDS(ON)=4.3mΩ@VGS=10V60V/125A,RDS(ON)=5.6mΩ@VGS=4.5V
  Super high density cell design for extremely lowRDS(ON)
  Exceptional on-resistance and maximum DCcurrent capability
  TO-220-3L/TO-220F-3L/TO-251S-3L/TO-252-2L/PPAK5x6-8L/TO-263-2Lpackage design

APPLICATIONS
 AC/DC Synchronous Rectifier
 Load Switch
 UPS
 Motor Control
 Power Tool