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 SPN4436W-N-Channel Enhancement Mode MOSFET  DataSheet DESCRIPTIONThe SPN4436W is the N-Channel logic enhancement mode
 power field effect transistors are produced using high cell
 density , DMOS trench technology.
 This high density process is especially tailored to
 minimize on-state resistance.
 These devices are particularly suited for low voltage
 application , notebook computer power management and
 other battery powered circuits where high-side
 switching .
 FEATURES 60V/8.0A,RDS(ON)= 38mΩ@VGS= 10V
  60V/6.0A,RDS(ON)= 44mΩ@VGS= 4.5V
  Super high density cell design for extremely low RDS (ON)
  Exceptional on-resistance and maximum DC current capability
  SOP – 8P package design
 APPLICATIONS DC/DC Converter
  Load Switch
    
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