SPN8822-Common-Drain Dual N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN8822 is the Common-Drain Dual N-Channel
logic enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application ,
notebook computer power management and other battery
powered circuits where high-side switching .

FEATURES
􀂋 20V/8.0A,RDS(ON)= 24mΩ@VGS= 4.5V
􀂋 20V/7.0A,RDS(ON)= 32mΩ@VGS= 2.5V
􀂋 20V/3.0A,RDS(ON)= 42mΩ@VGS= 1.8V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 TSSOP – 8P package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 Portable Equipment
􀁺 Battery Powered System
􀁺 DC/DC Converter
􀁺 Load Switch
􀁺 DSC
􀁺 LCD Display inverter

( TSSOP-8P )
Part No.	TYPE	VDSS	VGS	VTH		IDS	RDS(Max)				PD	Package	Note
				Min	Max	25°C	10V	4.5V	2.5V	1.8V	25°C
		V	V	V	V	A	mΩ	mΩ	mΩ	mΩ	W
SPP8803	P	20	12	0.35	0.9	7		20	25	35	1.5	TSSOP-8P
	P	20	12	0.35	0.9	7		20	25	35
SPP8803B	P	20	12	0.35	0.9	7		22	28	40	1.5	TSSOP-8P
	P	20	12	0.35	0.9	7		22	28	40
SPN8205W	N	20	8	0.25	1	5		24	34	80	1.5	TSSOP-8P
	N	20	8	0.25	1	5		24	34	80
SPN8822	N	20	12	0.4	1	8		24	32	42	1.5	TSSOP-8P
	N	20	12	0.4	1	8		24	32	42
SPN8822A	N	20	12	0.4	1	7.2		30	42		1.5	TSSOP-8P