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 SPN4412B-N-Channel Enhancement Mode MOSFET  DataSheet DESCRIPTIONThe SPN4412B is the N-Channel logic enhancement mode
 power field effect transistors are produced using high cell
 density , DMOS trench technology.
 This high density process is especially tailored to
 minimize on-state resistance.
 These devices are particularly suited for low voltage
 application , notebook computer power management and
 other battery powered circuits where high-side
 switching .
 FEATURES 30V/6.8A,RDS(ON)= 35mΩ@VGS= 10V
  30V/5.6A,RDS(ON)= 42mΩ@VGS= 4.5V
  Super high density cell design for extremely low RDS (ON)
  Exceptional on-resistance and maximum DC current capability
  SOP – 8P package design
 APPLICATIONS Power Management in Note book
  Portable Equipment
  Battery Powered System
  DC/DC Converter
  Load Switch
  DSC
  LCD Display inverter
 
 
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