SPP2311-ESD P-Channel Enhancement Mode MOSFET DataSheet
DESCRIPTION
The SPP2311 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
FEATURES
P-Channel -20V/0.45A,RDS(ON)= 0.65Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.90Ω@VGS=-2.5V -20V/0.25A,RDS(ON)= 1.5Ω@VGS=-1.8V -20V/0.25A,RDS(ON)= 3.0Ω@VGS=-1.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design
APPLICATIONS
Drivers : Relays/Solenoids/Lamps/Hammers Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
|