DESCRIPTION
The SPP3403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
-30V/-2.8A,RDS(ON)=100mΩ@VGS=- 10V
-30V/-2.5A,RDS(ON)=110mΩ@VGS=-4.5V
-30V/-1.5A,RDS(ON)=145mΩ@VGS=-2.5V
-30V/-1.0A,RDS(ON)=200mΩ@VGS=-1.8V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
