SPP4435B-P-Channel Enhancement Mode MOSFET DataSheet
DESCRIPTION The SPP4435B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES -30V/-9.2A,RDS(ON)= 24mΩ@VGS=- 10V -30V/-7.0A,RDS(ON)= 30mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP-8P package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
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