SPC6605-N&P Pair Enhancement Mode MOSFET DataSheet

DESCRIPTION APPLICATIONS
   The SPC6605 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES 
􀂋 N-Channel
20V/3.6A,RDS(ON)=97mΩ@VGS=4.5V
20V/3.1A,RDS(ON)=113mΩ@VGS=2.5V
􀂋 P-Channel
-20V/-2.4A,RDS(ON)= 128mΩ@VGS=-4.5V
-20V/-2.0A,RDS(ON)=188mΩ@VGS=-2.5V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 TSOP– 6P package design

APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter