SPN3458-P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN3458 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.

FEATURES 
􀂋 60V/5.0A,RDS(ON)= 115Ω@VGS=10V
􀂋 60V/4.5A,RDS(ON)= 125Ω@VGS=4.5V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 TSOP-6P package design

APPLICATIONS
  Power Management in Note book
  Portable Equipment
  Battery Powered System
  DC/DC Converter
  Load Switch
  DSC
  LCD Display inverter