SPP3467-P-Channel Enhancement Mode MOSFET

SPP3467-P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPP3467 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance.
    These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.

FEATURES
-20V/-5.0A,RDS(ON)= 90mΩ@VGS=-4.5V
-20V/-3.5A,RDS(ON)=110mΩ@VGS=-2.5V
  -20V/-1.7A,RDS(ON)=140mΩ@VGS=-1.8V
Super high density cell design for extremely low RDS (ON)
  Exceptional on-resistance and maximum DC current capability
  TSOP-6P package design

APPLICATIONS
  Power Management in Note book
  Portable Equipment
  Battery Powered System
  DC/DC Converter
  Load Switch
  DSC
  LCD Display inverter