SPN2326-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN2326 is the N-Channel logic enhancement
mode power field effect transistor which is produced
using super high cell density DMOS trench
technology. The SPN2326 has been designed
specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.

FEATURES
 110V/1A,RDS(ON)= 310mΩ@VGS= 10V
 High density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 SOT-23-6L package design

APPLICATIONS
 Powered System
 DC/DC Converter
 Load Switch

( SOT-23-6L )
Part No.	TYPE	VDSS	VGS	VTH		IDS	RDS(Max)				PD	Package	Note
				Min	Max	25°C	10V	4.5V	2.5V	1.8V	25°C
		V	V	V	V	A	mΩ	mΩ	mΩ	mΩ	W
SPP6506	P	30	20	1	3	2.8	105	135			1.15	SOT-23-6L
	P	30	20	1	3	2.8	105	135
SPP6507	P	30	12	0.4	1	2.8		115	150	215	1.15	SOT-23-6L
	P	30	12	0.4	1	2.8		115	150	215
SPN2622	N	20	12	0.4	1	4		80	100		1.15	SOT-23-6L
	N	20	12	0.4	1	4		80	100
SPN6561	N	30	20	1	3	2.8	60	80			1.15	SOT-23-6L
	N	30	20	1	3	2.8	60	80
SPN6562	N	30	12	0.8	1.6	2.8		75	105		1.15	SOT-23-6L
	N	30	12	0.8	1.6	2.8		75	105
SPN5002	N	500	20	1.75	3.25	0.025		250Ω	250Ω		1.3	SOT-23-6L
SPN2326	N	110	20	1	2.5	3.0	310
SPP2327	P	110	20	1	2.5	1.5	650	750			1.15	SOT-23-6L