SPN6561-Dual N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN6561 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES
􀂋 N-Channel
30V/2.8A,RDS(ON)= 60mΩ@VGS=10V
30V/2.3A,RDS(ON)= 80mΩ@VGS=4.5V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 SOT-23-6L package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 Portable Equipment
􀁺 Battery Powered System
􀁺 DC/DC Converter
􀁺 Load Switch
􀁺 DSC
􀁺 LCD Display inverter

( SOT-23-6L )
Part No.	TYPE	VDSS	VGS	VTH		IDS	RDS(Max)				PD	Package	Note
				Min	Max	25°C	10V	4.5V	2.5V	1.8V	25°C
		V	V	V	V	A	mΩ	mΩ	mΩ	mΩ	W
SPP6506	P	30	20	1	3	2.8	105	135			1.15	SOT-23-6L
	P	30	20	1	3	2.8	105	135
SPP6507	P	30	12	0.4	1	2.8		115	150	215	1.15	SOT-23-6L
	P	30	12	0.4	1	2.8		115	150	215
SPN2622	N	20	12	0.4	1	4		80	100		1.15	SOT-23-6L
	N	20	12	0.4	1	4		80	100
SPN6561	N	30	20	1	3	2.8	60	80			1.15	SOT-23-6L
	N	30	20	1	3	2.8	60	80
SPN6562	N	30	12	0.8	1.6	2.8		75	105		1.15	SOT-23-6L
	N	30	12	0.8	1.6	2.8		75	105
SPN5002	N	500	20	1.75	3.25	0.025		250Ω	250Ω		1.3	SOT-23-6L
SPN2326	N	110	20	1	2.5	3.0	310
SPP2327	P	110	20	1	2.5	1.5	650	750			1.15	SOT-23-6L