SPC6601-N&P Pair Enhancement Mode MOSFET DataSheet

DESCRIPTION APPLICATIONS
    The SPC6601 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES 
 N-Channel
30V/2.8A,RDS(ON)= 68mΩ@VGS=10V
30V/2.3A,RDS(ON)= 78mΩ@VGS=4.5V
30V/1.5A,RDS(ON)= 108mΩ@VGS=2.5V
 P-Channel
-30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V
-30V/-2.5A,RDS(ON)=120mΩ@VGS=-4.5V
-30V/-1.5A,RDS(ON)=150mΩ@VGS=-2.5V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 TSOT-23-6P package design

APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter