SPN80T06-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN80T06 is the N-Channel enhancement mode
power field effect transistor which is produced using high
cell density DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance. These devices are particularly suitable for
synchronous rectifier application, notebook computer
power management and other battery powered circuits.

FEATURES 
  60V/80A,RDS(ON)=9mΩ@VGS=10V60V/80A,RDS(ON)=13mΩ@VGS=4.5V
  Super high density cell design for extremely lowRDS(ON)
  Exceptional on-resistance and maximum DCcurrent capability
  TO-220-3L/PPAK5x6-8L/TO-252-2Lpackagedesign

APPLICATIONS
􀁺 DC/DC Converter
􀁺 Load Switch
􀁺 SMPS Secondary Side Synchronous Rectifier