SPN10T10-N-Channel Enhancement Mode MOSFET

SPN10T10-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN10T10 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN10T10
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.

FEATURES
100V/5A,RDS(ON)= 160mΩ@VGS= 10V
  High density cell design for extremely low RDS (ON)
  Exceptional on-resistance and maximum DC current capability
  TO-220,TO-220F package design

APPLICATIONS
  Powered System
  DC/DC Converter
  Load Switch

( TO-220 )

Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note

Min Max 25°C 10V 6.0V 4.5V 2.5V 25°C

V V V V A mΩ mΩ mΩ mΩ W

SPN6098 N 60 20 1 2.5 60 12 　 15 　 62 TO-220-3L 　

SPN6099 N 60 20 1 2.5 80 4 4.2 4.4 　 62 TO-220-3L 　

SPN7575 N 75 20 2 4 90 12 　　　 62 TO-220-3L 　

SPN9507 N 75 20 2 4 80 5 　　　 62 TO-220-3L 　

SPN3632 N 100 20 2 4 80 8.5 　 10 　 62 TO-220-3L 　

SPN7510 N 100 20 1 3 72 16 　 21 　 62 TO-220-3L 　

SPN10T10 N 100 20 1 3 9 160 　　　 62 TO-220F-3L 　

SPN65T10 N 100 20 2.0 4.0 68 14.0 　　　 62 TO-220-3L

SPN50T10 N 100 20 2.0 4.0 65 18 　　　 62 TO-220-3L

SPN80T10 N 100 20 2.0 4.0 85 7.1 　　　 62 TO-220-3L