SPN11T10-N-Channel Enhancement Mode MOSFET DataSheet
DESCRIPTION
The SPN11T10 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN05T10
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
FEATURES
100V/8A, RDS(ON)= 120mΩ@VGS= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
TO-252,TO-251 package design
APPLICATIONS
Powered System
DC/DC Converter
Load Switch