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 SPP2319-P-Channel Enhancement Mode MOSFET  DataSheet DESCRIPTIONThe SPP2319 is the P-Channel logic enhancement mode
 power field effect transistors are produced using high cell
 density , DMOS trench technology.
 This high density process is especially tailored to
 minimize on-state resistance.
 These devices are particularly suited for low voltage
 application such as cellular phone and notebook
 computer power management and other battery powered
 circuits, and low in-line power loss are needed in a very
 small outline surface mount package.
 FEATURES -40V/-3.0A,RDS(ON)= 96mΩ@VGS=- 10V
  -40V/-2.8A,RDS(ON)=110mΩ@VGS=-4.5V
  Super high density cell design for extremely low RDS (ON)
  Exceptional on-resistance and maximum DC current capability
  SOT-23-3L package design
 APPLICATIONS Power Management in Note book
  Portable Equipment
  Battery Powered System
  DC/DC Converter
  Load Switch
  DSC
  LCD Display inverter
 
 
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