SPN8878B-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN8878B is the N-Channel logic enhancement mode
power field effect transistor which is produced with high
cell density DMOS trench technology. The SPN2038 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.

FEATURES 
􀂋 30V/20A,RDS(ON)= 14mΩ@VGS=10V
􀂋 30V/15A,RDS(ON)= 19mΩ@VGS=4.5V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 TO-252 and TO-251 package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 Powered System
􀁺 DC/DC Converter
􀁺 Load Switch

( TO-251/TO-252-2L )
Part No.	TYPE	VDSS	VGS	VTH		IDS	RDS(Max)				PD	Package	Note
				Min	Max	25°C	10V	4.5V	2.5V	1.8V	25°C
		V	V	V	V	A	mΩ	mΩ	mΩ	mΩ	W
SPP2095	P	20	12	0.32	0.8	12		65	85	105	40	TO-252-2L
SPP3052	P	30	20	1	3	25	50	85			40	TO-252-2L
SPP3095	P	30	20	1	3	12	100	150			40	TO-252-2L
SPP5413	P	40	20	0.8	2.5	18	26	36			40	TO-252-2L
SPN2038	N	20	16	0.5	1.2	38		20	28		40	TO-252-2L
SPN2054	N	20	12	0.36	1	12	40			60	40	TO-252-2L
SPN3006	N	30	20	1	2.5	80	5.5	9			40	TO-252-2L
SPN3009	N	30	20	1	2.5	51	9	13.5			40	TO-252-2L
SPN3055	N	30	20	1	3	12	60	90			40	TO-252-2L
SPN8878	N	30	20	1	3	25	12	17			40	TO-252-2L
SPN8878B	N	30	20	0.6	1.8	20	14	19			40	TO-252-2L
SPN8882	N	30	20	0.8	2.4	60	10	14			40	TO-251TO252-2
SPN5454	N	40	20	0.5	1	20	18	20	28		40	TO-252-2L
SPN9910	N	60	20	1	2.5	60	12	15			40	TO-251TO252-2
SPN9971	N	60	20	0.8	2	25	40	45			40	TO-251TO252-2
SPN9977	N	60	20	0.5	1.5	16	110	115			40	TO-251TO252-2
SPN05T10	N	100	20	1	2.5	6	320	340			40	TO-252-2L
SPN09T10	N	100	20	1	3	14	160				40	TO-252-2L
SPN11T10	N	100	20	1	3	16	120	200			40	TO-252-2L
SPN30T10	N	100	20	1	3	22	45	50			40	TO-252-2L
SPN12T20	N	200	20	2	5	18	210				40	TO-252-