SPN6435-Dual N-Channel Enhancement Mode MOSFET DataSheet
DESCRIPTION APPLICATIONS The SPN6435 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
FEATURES 40V/0.30A , RDS(ON)= 4.0Ω@VGS=10V 40V/0.20A , RDS(ON)= 5.0Ω@VGS=5.0V 40V/0.02A , RDS(ON)= 10.0Ω@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-363 package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
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