SPP1433A-P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPP1433A is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.

FEATURES 
􀂋 -30V/-2.8A,RDS(ON)=120mΩ@VGS=- 10V
􀂋 -30V/-2.5A,RDS(ON)=135mΩ@VGS=-4.5V
􀂋 -30V/-1.5A,RDS(ON)=165mΩ@VGS=-2.5V
􀂋 -30V/-1.0A,RDS(ON)=195mΩ@VGS=-1.8V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 SOT-353 ( SC–70 ) package design

APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter

( SOT-353 / SC-70-5L )
Part No.	TYPE	VDSS	VGS	VTH		IDS	RDS(Max)				PD	Package	Note
				Min	Max	25°C	10V	4.5V	2.5V	1.8V	25°C
		V	V	V	V	A	mΩ	mΩ	mΩ	mΩ	W
SPP1413A	P	20	12	0.35	0.8	2.3		130	150	190	0.95	SOT-353
SPP1433A	P	30	12	0.4	1	2.3	120	135	165	195	0.95	SOT-353
SPN1423A	N	20	12	0.4	1	2.4		80	90	110	0.95	SOT-353
SPN1443A	N	30	12	0.8	1.6	2.4	95	105	135		0.95	SOT-353