SPC4606-N&P Pair Enhancement Mode MOSFET

SPC4606-N&P Pair Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPC4606 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.

FEATURES
N-Channel
30V/4.0A,RDS(ON)=40mΩ@VGS=10V
30V/3.6A,RDS(ON)=50mΩ@VGS=4.5V
P-Channel
-30V/-4.0A,RDS(ON)=70mΩ@VGS=-10V
-30V/-3.2A,RDS(ON)=95mΩ@VGS=-4.5V
SuperhighdensitycelldesignforextremelylowRDS(ON)
Exceptionalon-resistanceandmaximumDCcurrentcapability
PPAK3x2–8Lpackagedesign

APPLICATIONS
•Power Managementin Notebook
•Portable Equipment
•Battery Powered System
•DC/DC Converter
•Load Switch
•DSC
•LCD Display inverter