SPN166T06-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN166T06 is the N-Channel logic
enhancement mode power field effect transistor
which is produced using super high cell density
DMOS trench technology. This high density
process is especially tailored to minimize
on-state resistance. These devices are
particularly suitable for synchronous rectifier
application, Motor control power management
and other Power Tool circuits. It has been
optimized for low gate charge, low RDS(ON) and
fast switching speed.

FEATURES
  60V/166A,RDS(ON)=3.0mΩ@VGS=10V
  RDS(ON)=4.5mΩ@VGS=4.5V
  Super high density cell design forextremely low RDS(ON)
  Exceptional on-resistance and maximumDC current capability
  TO-220-3L/TO-220F-3L/PPAK5x6-8Lpackage design

APPLICATIONS
 DC/DC Converter
 Load Switch
 SMPS Secondary Side Synchronous Rectifier
 Motor Control
 Power Tool