SPN125T04-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN125T04 is the N-Channel logic enhancement
mode power field effect transistor which is produced
using super high cell density DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suitable for synchronous rectifier application,
Motor control power management and other Power Tool
circuits. It has been optimized for low gate charge, low
RDS(ON) and fast switching speed.

FEATURES
45V/125A,RDS(ON)=4.5mΩ@VGS=10V
  45V/125A,RDS(ON)=7.0mΩ@VGS=4.5V
  Super high density cell design for extremely lowRDS (ON)
  Exceptional on-resistance and maximum DCcurrent capability
  TO-220-3L/TO-220F-3L/TO-252-2L/PPAK5x6-8Lpackage design

APPLICATIONS
 DC/DC Converter
 Load Switch
 SMPS Secondary Side Synchronous Rectifier
 Motor Control
 Power Tool