SPN8668-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN8668 is the N-Channel logic enhancement modepower field effect transistors are produced using high celldensity, DMOS trench technology.
This high density process is especially tailored tominimize on-state resistance.
These devices are particularly suited for low voltage application,notebook computer power management andother battery powered circuits where highefficiency andfastswitchingis required.

FEATURES
60V/80A,RDS(ON)=21mΩ@VGS=10V
60V/80A,RDS(ON)=24mΩ@VGS=4.5V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DC currentcapability
PPAK3x3-8Lpackage design

APPLICATIONS
Motor Drive
Power Tools
LED Lighting