SPN8632-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
TheSPN8632istheN-Channel logic enhancement modepower field effect transistors are produced using high celldensity , DMOS trench technology.
This high density process is especially tailored tominimize on-state resistance.
These devices are particularly suited for low voltageapplication,notebook computer power management andother battery powered circuits where high-sideswitching.

FEATURES
30V/96A,RDS(ON)=4.2mΩ@VGS=10V
30V/96A,RDS(ON)=6mΩ@VGS=4.5V
Super high density cell design for extremely lowRDS(ON)
Exceptional on-resistance and maximum DCcurrent capability
PPAK3x3package design

APPLICATIONS
MB/VGA/Vcore
POL Applications
SMPS 2SR