SPC6606-N&P Pair Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPC6606 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES
N-Channel
12V/4.0A,RDS(ON)=26mΩ@ VGS=4.5V12V/3.0A,RDS(ON)=35mΩ@ VGS=2.5V12V/2.0A,RDS(ON)=50mΩ@ VGS=1.8V
P-Channel
-12V/-3.3A,RDS(ON)=70mΩ@ VGS=-4.5V
-12V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V
-12V/-2.3A,RDS(ON)=110mΩ@VGS=-1.8V
SuperhighdensitycelldesignforextremelylowRDS (ON)
Exceptionalon-resistanceandmaximumDCcurrentcapability
TDFN2X2-6Lpackagedesign

APPLICATIONS
•Power Managemen tin Notebook
•Portable Equipment
•Battery Powered System
•DC/DC Converter
•Load Switch
•DSC
•LCD Display inverter