SPN8206-Common-Drain Dual N-Channel Enhancement Mode MOSFET  DataSheet
DESCRIPTION
The SPN8206 is the Common-Drain Dual N-Channel
logic enhancement mode power field effect transistors are
produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application,
notebook computer power management and other battery
powered circuits where high-side switching.
FEATURES
20V/5.0A,RDS(ON)= 8.2mΩ@VGS= 4.5V
20V/3.0A,RDS(ON)= 11.0mΩ@VGS= 2.5V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
ESD capability 2KV
TDFN -6P package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
| ( TDFN-6 ) |
| Part No. |
TYPE |
VDSS |
VGS |
VTH |
IDS |
RDS(Max) |
PD |
Package |
Note |
| Min |
Max |
25°C |
10V |
4.5V |
2.5V |
1.8V |
25°C |
| V |
V |
V |
V |
A |
mΩ |
mΩ |
mΩ |
mΩ |
W |
| SPN8206 |
N |
20 |
12 |
0.5 |
1.5 |
11 |
|
8.2 |
11 |
|
|
TDFN-6P | |