SPN50T10-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN50T10 is the N-Channel enhancement mode powerfield effect transistor which is produced using super high cell density DMOS trench technology.
The SPN80T10 has been designed specifically to improve the overall efficiencyof DC/DC converters using either synchronous orconventional switching PWM controllers. It has beenoptimized for low gate charge, lowRDS(ON)and fastswitching speed.

FEATURES
100V/65A,RDS(ON)=18mΩ@VGS= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC currentcapability
TO-220-3Lpackage design

APPLICATIONS
Powered System
DC/DC Converter
Load Switch