SPN1032-ESD N-Channel Enhancement Mode MOSFET

SPN1032-ESD N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN1032 is the N-Channel enhancement mode powerfield effect
transistors are produced using high celldensity, DMOS trench technology.
This high densityprocess is especially tailored to minimize on-stateresistanceand
provide superior switching performance.
These devices are particularly suited for low voltageapplicationssuch as notebook
computer powermanagement and other battery powered circuitswherehigh-side switching,
low in-line power loss, andresistance to transients are needed.

FEATURES
N-Channel
30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V
30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V
30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V
Superhigh densitycelldesign forextremelylow
RDS(ON)
Exceptionalon-resistanceandmaximumDC
currentcapability
SOT-523 (SC-89-3L)package design

APPLICATIONS
Drivers : Relays/Solenoids/Lamps/Hammers
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers