SPN3632-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN3632 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .

FEATURES 
􀂋 100V/80A,RDS(ON)= 8.5mΩ@VGS= 10V
􀂋 100V/40A,RDS(ON)= 9.8mΩ@VGS= 6.0V
􀂋 100V/10A,RDS(ON)= 10mΩ@VGS= 4.5V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 TO-220-3L package design

APPLICATIONS
􀁺 DC/DC Converter
􀁺 Load Switch
􀁺 SMPS Secondary Side Synchronous Rectifier

( TO-220 )
Part No.	TYPE	VDSS	VGS	VTH		IDS	RDS(Max)				PD	Package	Note
				Min	Max	25°C	10V	6.0V	4.5V	2.5V	25°C
		V	V	V	V	A	mΩ	mΩ	mΩ	mΩ	W
SPN6098	N	60	20	1	2.5	60	12		15		62	TO-220-3L
SPN6099	N	60	20	1	2.5	80	4	4.2	4.4		62	TO-220-3L
SPN7575	N	75	20	2	4	90	12				62	TO-220-3L
SPN9507	N	75	20	2	4	80	5				62	TO-220-3L
SPN3632	N	100	20	2	4	80	8.5		10		62	TO-220-3L
SPN7510	N	100	20	1	3	72	16		21		62	TO-220-3L
SPN10T10	N	100	20	1	3	9	160				62	TO-220F-3L
SPN65T10	N	100	20	2.0	4.0	68	14.0				62	TO-220-3L
SPN50T10	N	100	20	2.0	4.0	65	18				62	TO-220-3L
SPN80T10	N	100	20	2.0	4.0	85	7.1				62	TO-220-3L