SPC5604-N&P Pair Enhancement Mode MOSFET  DataSheet
DESCRIPTION APPLICATIONS
The SPC5604 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching, low in-line power loss, and
resistance to transients are needed.
FEATURES
N-Channel
40V/10A,RDS(ON)= 24mΩ@VGS= 10V
40V/ 8A,RDS(ON)= 28mΩ@VGS= 4.5V
40V/ 6A,RDS(ON)= 32mΩ@VGS= 2.5V
P-Channel
-40V/-10A,RDS(ON)= 32mΩ@VGS=- 10V
-40V/- 8A,RDS(ON)= 42mΩ@VGS=- 4.5V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
TO-252-5L package design
APPLICATIONS
Power Management in Note book
Battery Powered System
DC/DC Converter
LCD Display inverter
| ( TO-252-5L ) |
| Part No. |
TYPE |
VDSS |
VGS |
VTH |
IDS |
RDS(Max) |
PD |
Package |
Note |
| Min |
Max |
25°C |
10V |
6.0V |
4.5V |
2.5V |
25°C |
| V |
V |
V |
V |
A |
mΩ |
mΩ |
mΩ |
mΩ |
W |
| SPC5604 |
N |
40 |
20 |
0.5 |
1 |
12 |
24 |
|
28 |
|
55 |
TO-252-5L | |