SPN09T10-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN09T10 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN09T10
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast switching
speed.

FEATURES 
  100V/8A,RDS(ON)=160mΩ@VGS= 10V
  High density cell design for extremely low RDS (ON)
  Exceptional on-resistance and maximum DC current capability
  TO-252,TO-251,TO-263 package design

APPLICATIONS
  Powered System
  DC/DC Converter
  Load Switch

( TO-251/TO-252-2L )
Part No.	TYPE	VDSS	VGS	VTH		IDS	RDS(Max)				PD	Package	Note
				Min	Max	25°C	10V	4.5V	2.5V	1.8V	25°C
		V	V	V	V	A	mΩ	mΩ	mΩ	mΩ	W
SPP2095	P	20	12	0.32	0.8	12		65	85	105	40	TO-252-2L
SPP3052	P	30	20	1	3	25	50	85			40	TO-252-2L
SPP3095	P	30	20	1	3	12	100	150			40	TO-252-2L
SPP5413	P	40	20	0.8	2.5	18	26	36			40	TO-252-2L
SPN2038	N	20	16	0.5	1.2	38		20	28		40	TO-252-2L
SPN2054	N	20	12	0.36	1	12	40			60	40	TO-252-2L
SPN3006	N	30	20	1	2.5	80	5.5	9			40	TO-252-2L
SPN3009	N	30	20	1	2.5	51	9	13.5			40	TO-252-2L
SPN3055	N	30	20	1	3	12	60	90			40	TO-252-2L
SPN8878	N	30	20	1	3	25	12	17			40	TO-252-2L
SPN8878B	N	30	20	0.6	1.8	20	14	19			40	TO-252-2L
SPN8882	N	30	20	0.8	2.4	60	10	14			40	TO-251TO252-2
SPN5454	N	40	20	0.5	1	20	18	20	28		40	TO-252-2L
SPN9910	N	60	20	1	2.5	60	12	15			40	TO-251TO252-2
SPN9971	N	60	20	0.8	2	25	40	45			40	TO-251TO252-2
SPN9977	N	60	20	0.5	1.5	16	110	115			40	TO-251TO252-2
SPN05T10	N	100	20	1	2.5	6	320	340			40	TO-252-2L
SPN09T10	N	100	20	1	3	14	160				40	TO-252-2L
SPN11T10	N	100	20	1	3	16	120	200			40	TO-252-2L
SPN30T10	N	100	20	1	3	22	45	50			40	TO-252-2L
SPN12T20	N	200	20	2	5	18	210				40	TO-252-