SPN8919-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN8919 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN8910
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.

FEATURES 
   100V/2A, RDS(ON)= 180mΩ@VGS= 10V
   High density cell design for extremely low RDS (ON)
   Exceptional on-resistance and maximum DC current capability
   SOT-89 package design

APPLICATIONS
   High Frequency Small Power Switching forMB/NB/VGA
   Network DC/DC Power System
   Load Switch

( SOT-89 )

Part No.

TYPE

VDSS

VGS

VTH

IDS

RDS(Max)

PD

Package

Note

Min

Max

25°C

10V

4.5V

2.5V

1.8V

25°C

V

V

V

V

A

mΩ

mΩ

mΩ

mΩ

W

SPN8910

N

100

20

1

2.5

2.2

320

340

1.5

SOT-89

SPN8919

N

100

20

1

3

2.8

180

1.5

SOT-89